Current–voltage characteristics of GaSb homojunctions prepared by MOVPE-Reference-Cited by-同舟云学术

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Current–voltage characteristics of GaSb homojunctions prepared by MOVPE

Published:2003-09 Issue:9 Volume:47 Page:1471-1478
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Toušková J.,Kindl D.,Blahitka B.,Toušek J.,Hulicius E.,Pangrác J.,Samochin E.,Šimeček T.,Výborný Z.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Crystal growth progress in response to the needs for optical communications;Laudise;J Cryst Growth,1983

2. The physics and technology of gallium antimonide: An emerging optoelectronic material;Dutta;J Appl Phys,1997

3. Gallium antimonide device related properties;Milnes;Solid-State Electron,1993

4. Ion implantation damage and annealing in InAs, GaSb, and GaP;Pearton;J Appl Phys,1988

5. Anomalous behavior of ion-implanted GaSb;Callec;Appl Phys Lett,1991

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1. Analysis of the GaSb-p+/GaSb-p/GaSb-n+/GaSb-n structure performances at room temperature, for thermo-photovoltaic applications;Optik;2018-12

2. Transport-controlling deep defects in MOVPE grown GaSb;Semiconductor Science and Technology;2006-01-06

3. Influence of photon recycling on photovoltage spectra of GaSb diodes;Journal of Applied Physics;2004-05

4. Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy;Journal of Applied Physics;2004-02-15

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