Zero-point correction of the carrier density in the measurement of MOS inversion-layer mobility
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference3 articles.
1. Charge accumulation and mobility in thin dielectric MOS transistors;Sodini;Solid State Electron.,1982
2. On the universality of inversion layer mobility in Si MOSFET’s: Part I––Effects of substrate impurity concentration;Takagi;IEEE Trans. Electron Dev.,1994
3. Comparison of MOSFET-threshold-voltage extraction methods;Terada;Solid-State Electron.,2001
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