Influence of AC signal oscillator level on effective mobility measurement by split C–V technique in MOSFETs
Author:
Affiliation:
1. Minatec‐INPGIMEP‐LAHC Laboratory3 Parvis Louis Neel38016GrenobleFrance
2. Department of PhysicsAristotle University of ThessalonikiThessaloniki54124Greece
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2016.1715
Reference10 articles.
1. Investigation of the MOST channel conductance in weak inversion
2. Charge accumulation and mobility in thin dielectric MOS transistors
3. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
4. Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current
5. Characterization of effective mobility by split C(V) technique in N-MOSFETs with ultra-thin gate oxides
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