Sub-nanosecond semiconductor opening switches based on 4H–SiC p+pon+-diodes-Reference-Cited by-同舟云学术

Sub-nanosecond semiconductor opening switches based on 4H–SiC p+pon+-diodes

Published:2003-10 Issue:10 Volume:47 Page:1769-1774
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Grekhov Igor V.,Ivanov Pavel A.,Khristyuk Dmitry V.,Konstantinov Andrey O.,Korotkov Sergey V.,Samsonova Tat’yana P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Power drift step recovery diodes (DSRD);Grekhov;Solid-State Electron.,1985

2. Grekhov IV. In: Abstracts of the 11th Pulsed Power Conference 1997, Baltimore, USA. p. 108

3. Grekhov I, Korotkov S. Novel semiconductor-based high power switches and pulse generators. In: Abstracts of the AMEREM 2002, Annapolis MD, USA. p. 58

4. High hole lifetime (3.8 μs) in 4H–SiC diodes with 5.5 kV blocking voltage;Ivanov;Electron. Lett.,1999

5. Nanosecond risetime pulse characterization of SiC p+n junction diode breakdown and switching properties;Neudeck,1997

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