Processing technology for the investigation of sub-50 nm copper damascene interconnects-Reference-Cited by-同舟云学术

Processing technology for the investigation of sub-50 nm copper damascene interconnects

Published:2003-07 Issue:7 Volume:47 Page:1237-1241
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Steinlesberger G,Engelhardt M,Schindler G,Kretz J,Steinhögl W,Bertagnolli E

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. The International Roadmap for Semiconductors, www.itrs.net, 2001

2. Schindler G, Steinlesberger G, Engelhardt M, Steinhögl W. Electrical characterization of copper interconnects with end-of-roadmap feature sizes. This volume, 2002

3. Engelhardt M, Schindler G, Mosig K, Steinlesberger G. Steinhögl W, Gebara G. Extending copper metallization technology for wiring to end-of-roadmap feature sizes. Adv Metall Conf, 2001

4. Steinhögl W, Engelhardt M, Schindler G, Steinlesberger G. Modelling the electrical resistivity of sub 50 nm copper wires. This volume, 2002

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