Influence of dots size and dots number fluctuations on the electrical characteristics of multi-nanocrystal memory devices

Author:

Perniola L.,D Salvo B.,Ghibaudo G.,Foglio Para A.,Pananakakis G.,Baron T.,Lombardo S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. ITRS Roadmap, 2002 edition

2. Charge-trap memory device fabricated by oxidation of Si1−xGex;King;IEEE Trans. Electron. Dev.,2001

3. Influence of chemical properties of the substrate on silicon quantum dot nucleation;Mazen;J. Electrochem. Soc.,2003

4. Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices;De Salvo;IEEE Trans. Electron. Dev.,2001

5. Feller W. An introduction to probability theory and its applications. Wiley & Sons [Chapter XII]

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