GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates-Reference-Cited by-同舟云学术

GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates

Published:2004-01 Issue:1 Volume:48 Page:193-196
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

LaRoche J.R.,Luo B.,Ren F.,Baik K.H.,Stodilka D.,Gila B.,Abernathy C.R.,Pearton S.J.,Usikov A.,Tsvetkov D.,Soukhoveev V.,Gainer G.,Rechnikov A.,Dimitriev V.,Chen G.-T.,Pan C.-C.,Chyi J.-I.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors

2. Long-term thermal stability of Ti/Al/Mo/Au ohmic contacts on n-GaN

3. Wide and narrow bandgap semiconductors for power electronics: A new valuation

4. AlGaN/GaN HEMTs-an overview of device operation and applications

5. Microwave noise performance of AlGaN/GaN HEMTs

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