Processing and annealing conditions on the dielectric properties of (Ta2O5)0.92(TiO2)0.08 ceramics
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference14 articles.
1. A newly designed planar stacked capacitor cell with high dielectric constant film for 256 Mbit DRAM
2. UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMs
3. Effects of additive elements on electrical properties of tantalum oxide films
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1. Obtaining and electrical properties of ceramics based on mixed niobium and tantalum pentoxide Nb2(1–y)Ta2y O5;Inorganic Materials: Applied Research;2017-03
2. Electrical properties of Nb2(1–y)Ta2yO5-based ceramics;Inorganic Materials;2017-01
3. Direct Evidence for the Modulation Caused by Ti Substitution of Ta in a (Ta2 O5 )0.92 (TiO2 )0.08 Ceramic by Analytical Electron Microscopy;Journal of the American Ceramic Society;2013-12-30
4. Low-Operating-Voltage Solution-Processed InZnO Thin-Film Transistors Using High-$k$ SrTa$_{2}$O$_{6}$;Japanese Journal of Applied Physics;2012-03-21
5. Low-Operating-Voltage Solution-Processed InZnO Thin-Film Transistors Using High-kSrTa2O6;Japanese Journal of Applied Physics;2012-03-01
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