A newly designed planar stacked capacitor cell with high dielectric constant film for 256 Mbit DRAM-Reference-Cited by-同舟云学术

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A newly designed planar stacked capacitor cell with high dielectric constant film for 256 Mbit DRAM

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Container-title:Proceedings of IEEE International Electron Devices Meeting
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Author:

Eimori T.,Ohno Y.,Kimura H.,Matsufusa J.,Kishimura S.,Yoshida A.,Sumitani H.,Maruyama T.,Hayashide Y.,Moriizumi K.,Katayama T.,Asakura M.,Horikawa T.,Shibano T.,Itoh H.,Sato K.,Namba K.,Nishimura T.,Satoh S.,Miyoshi H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx2/1088/8045/00347281.pdf?arnumber=347281

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1. Sintering Process Dependent Dielectric Properties of [Ta2O5]1-x-[TiO2]x, for the Compositions Near x = 0.08;Ferroelectrics Letters Section;2010-10-22

2. Electrical characteristics of ZrN metallised metal-oxide-semiconductor and metal-insulator-metal devices;Journal of Materials Science: Materials in Electronics;2006-05

3. Processing and annealing conditions on the dielectric properties of (Ta2O5)0.92(TiO2)0.08 ceramics;Materials Letters;2002-12

4. Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs;Materials Chemistry and Physics;2000-08

5. Effect of oxygen to argon ratio on defects and electrical conductivities in Ba0.47Sr0.53TiO3thin-film capacitors;Journal of Physics D: Applied Physics;1999-08-20

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