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A new method for depth-profiling of shallow layers in silicon wafers by repeated chemical etching and total-reflection X-ray fluorescence analysis

  • Published:1999-10 Issue:10 Volume:54 Page:1385-1392
  • ISSN:0584-8547
  • Container-title:Spectrochimica Acta Part B: Atomic Spectroscopy
  • language:en
  • Short-container-title:Spectrochimica Acta Part B: Atomic Spectroscopy

Author:

Klockenkämper R,von Bohlen A

Publisher

Elsevier BV

Subject

Spectroscopy,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Reference16 articles.

1. Silizium-Halbleitertechnologie;Hilleringmann,1996

2. Ion beam synthesis of buried metallic and semiconducting silicides;Mantl;Nucl. Instrum. Meth.,1993

3. Fundamentals of Surface and Thin Film Analysis;Feldman,1986

4. Microbeam and surface analysis;Friedbacher,1998

5. Glancing incidence X-ray fluorescence of layered materials;de Boer;Phys. Rev. B,1991

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1. Total reflection X-ray fluorescence;Physical Sciences Reviews;2019-03-30

2. Performance of TXRF and GI-XRF Analyses;Total-Reflection X-Ray Fluorescence Analysis and Related Methods;2014-12-19

3. Surface and Thin-Film Analysis, 4 Photon Detection;Ullmann's Encyclopedia of Industrial Chemistry;2011-10-15

4. Total-Reflection X-Ray Fluorescence (TXRF) Analysis;Surface and Thin Film Analysis;2011-04-12

5. Depth profiles of Al impurities implanted in Si wafers determined by means of the high-resolution grazing emission X-ray fluorescence technique;Spectrochimica Acta Part B: Atomic Spectroscopy;2010-06
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