Characterisation of heteroepitaxial compound semiconductor layers and superlattices using transmission electron microscopy-Reference-Cited by-同舟云学术

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Characterisation of heteroepitaxial compound semiconductor layers and superlattices using transmission electron microscopy

Published:1990-01 Issue:3 Volume:20 Page:231-261
ISSN:0960-8974
Container-title:Progress in Crystal Growth and Characterization of Materials
language:en
Short-container-title:Progress in Crystal Growth and Characterization of Materials

Author:

Cerva H.,Oppolzer H.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference40 articles.

1. Characterisation of structures grown by Movpe using x-ray diffraction

2. The preparation of transmission electron microscope specimens from compound semiconductors by ion milling

3. Transmission electron microscopy of interfaces in III–V compound semiconductors

4. Growth of multiple thin layer structures in the GaAs-AlAs system using a novel VPE reactor

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1. Growth and Characterization Techniques;NanoScience and Technology;2004

2. Spontaneous ordering of nanostructures on crystal surfaces;Reviews of Modern Physics;1999-07-01

3. Measurement of the X-Ray Diffraction Phase in a 2D Crystal;Physical Review Letters;1997-08-18

4. Investigation of the interfacial quality and the influence of different substrates in ZnSe homoepitaxy;Journal of Crystal Growth;1997-04

5. Correlation between crystal defects and the band gap of epitaxially grown Hg1 − Zn Se on GaAs(001);Journal of Crystal Growth;1996-02

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