Degradation in InGaAsP semiconductor lasers resulting from human body model ESD-Reference-Cited by-同舟云学术

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Degradation in InGaAsP semiconductor lasers resulting from human body model ESD

Published:1993-06 Issue:3 Volume:29 Page:227-250
ISSN:0304-3886
Container-title:Journal of Electrostatics
language:en
Short-container-title:Journal of Electrostatics

Author:

DeChairo L.F.,Unger B.A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Biotechnology,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Electric surge endurance of TJS laser diodes;Kakimoto,1982

2. Lifetimes of 800 nm-wavelength GaAlAs semicondutor lasers;Kumada,1983

3. Catastrophic and latent damage in GaAlAs lasers caused by Electrical transients;Sim,1984

4. The characterization and control of leading edge transients from human body model ESD simulators;Chemelli,1985

5. Damage-induced spectral perturbations in multilongitudinal mode semiconductor lasers;DeChiaro;J. Lightvw. Tech.,1990

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The triboelectricity of the human body;Nano Energy;2021-08

2. ESD in GaAs;The ESD Handbook;2021-03-26

3. ESD RF Design;The ESD Handbook;2021-03-26

4. Reliability of optoelectronics;Reliability Characterisation of Electrical and Electronic Systems;2015

5. A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology;Microelectronics Reliability;2011-12

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