A newly observed high frequency effect on the ESD protection utilized in a gigahertz NMOS technology

Author:

Weston H.T.,Lee V.W.,Stanik T.D.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Biotechnology,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. A fine-line NMOS 3-Gbit/s 12-channel time-division multiplexer-demultiplexer chip set;Bayruns;IEEE J. Solid-State Circuits,1989

2. 5 GHz, 12 mW NMOS Frequency Divider;Weston;Electronics Letters,1988

3. Thick oxide device ESD performance under process variations,;McPhee,1986

4. A submicron NMOS technology suitable for low power high speed circuits;Fichtner,1985

5. A submicron NMOS multiplexer-demultiplexer chip set for 622.08-Mb/s SONET applications;Weston;IEEE J. Solid-State Circuits,1992

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