Carrier Transport in Bulk Silicon and in Weak Silicon Inversion Layers-Reference-Cited by-同舟云学术

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Carrier Transport in Bulk Silicon and in Weak Silicon Inversion Layers

Published:1990 Issue: Volume: Page:103-154
ISSN:0065-2539
Container-title:Advances in Electronics and Electron Physics
language:
Short-container-title:

Author:

Jain S.C.,Winters K.H.,Van Overstraeten R.

Publisher

Elsevier

Reference66 articles.

1. Threshold conduction in inversion layers

2. VII. The Hall effect in inversion layers

3. Application of effective-medium theory to inversion layers

4. Frequency Dependence of the Electron Conductivity in the Silicon Inversion Layer in the Metallic and Localized Regimes

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxidation of silicon: the VLSI gate dielectric;Semiconductor Science and Technology;1995-03-01

2. Limits and challenges in electronics;Contemporary Physics;1991-11

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