Distance-independent lateral photovoltaic effect in a-Si:H/c-Si p–i–n structure with the aid of bias voltage-Reference-Cited by-同舟云学术

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Distance-independent lateral photovoltaic effect in a-Si:H/c-Si p–i–n structure with the aid of bias voltage

Published:2016-04 Issue: Volume:168 Page:48-51
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Liu Jihong,Zhang Lihong,Liu Yanan,Qiao Shuang,Yan Guoying,Wang Shufang,Fu Guangsheng

Funder

National Natural Science Foundation of China

Nature Science Foundation for Distinguished Young Scholars of Hebei Province

One Hundred Talent Project of Hebei Province

Science and Technology Research and Development Foundation of Baoding

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference25 articles.

1. A New Semiconductor Photocell Using Lateral Photoeffect

2. Large lateral photovoltaic effect in modulation‐doped AlGaAs/GaAs heterostructures

3. Lateral photovoltaic effect in porous silicon

4. Large lateral photovoltaic effect observed in nano Al-doped ZnO films

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2. Effects of photogenerated-hole diffusion on 3C-SiC/Si heterostructure optoelectronic position-sensitive detector;Journal of Physics D: Applied Physics;2021-04-16

3. Lateral photovoltaic effect based on novel materials and external modulations;Journal of Physics D: Applied Physics;2021-02-01

4. Ultrabroadband, Large Sensitivity Position Sensitivity Detector Based on a Bi 2 Te 2.7 Se 0.3 /Si Heterojunction and Its Performance Improvement by Pyro‐Phototronic Effect;Advanced Electronic Materials;2019-09-18

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