Ultrabroadband, Large Sensitivity Position Sensitivity Detector Based on a Bi 2 Te 2.7 Se 0.3 /Si Heterojunction and Its Performance Improvement by Pyro‐Phototronic Effect-Reference-Cited by-同舟云学术

Ultrabroadband, Large Sensitivity Position Sensitivity Detector Based on a Bi 2 Te 2.7 Se 0.3 /Si Heterojunction and Its Performance Improvement by Pyro‐Phototronic Effect

Published:2019-09-18 Issue:12 Volume:5 Page:1900786
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Qiao Shuang¹,Chen Mingjing²,Wang Yu¹,Liu Jihong¹,Lu Junfeng³,Li Fangtao³,Fu Guangsheng¹,Wang Shufang¹,Ren Kailiang³⁴,Pan Caofeng³⁴^ORCID

Affiliation:

1. Hebei Key Laboratory of Optic‐Electronic Information and MaterialsNational & Local Joint Engineering Laboratory of New Energy Photoelectric DevicesCollege of Physics Science and Technology, Hebei University Baoding 071002 P. R. China

2. College of Quality and Technical SupervisionHebei University Baoding 071002 P. R. China

3. Beijing Key Laboratory of Micro‐Nano Energy and SensorBeijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences Beijing 100083 P. R. China

4. School of Nanoscience and TechnologyUniversity of Chinese Academy of Sciences Beijing 100049 P. R. China

Funder

Natural Science Foundation of Hebei Province

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900786

Reference68 articles.

1. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

2. Colloquium: Topological insulators