Carrier transport mechanism of Al contacts on n-type 4H-SiC-Reference-Cited by-同舟云学术

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Carrier transport mechanism of Al contacts on n-type 4H-SiC

Published:2018-10 Issue: Volume:228 Page:232-234
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Kim Seongjun,Kim Hong-Ki,Jeong Seonghoon,Kang Min-Jae,Kang Min-Sik,Lee Nam-Suk,Cuong Tran Viet,Koo Sang-Mo,Kim Hyunsoo,Shin Hoon-Kyu

Funder

NRF

Korea Institute of Energy Technology Evaluation and Planning

MOTIE

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. High-Performance Temperature Sensor Based on 4H-SiC Schottky Diodes

2. SiC field-effect devices operating at high temperature

3. Temperature sensor based on 4H-silicon carbide pn diode operational from 20 °C to 600 °C

4. Ni-Based Ohmic Contacts ton-Type 4H-SiC: The Formation Mechanism and Thermal Stability

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of bulk silicon carbide technology in high temperature MEMS sensors;Materials Science in Semiconductor Processing;2024-04

2. Fabrication of SiC MEMS Sensors;Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors;2018

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