Lattice bending in monocrystalline GaAs induced by nanoscratching
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference25 articles.
1. GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties;Adachi,1994
2. Semiconducting and other major properties of gallium arsenide
3. Vickers indentation of thin GaAs (001) samples
4. Nanoscale dislocation patterning by ultralow load indentation
5. Plastic deformation modes of gallium arsenide in nanoindentation and nanoscratching
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