Morphologies and plane indices of pyramid patterns on wet-etched patterned sapphire substrate-Reference-Cited by-同舟云学术

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Morphologies and plane indices of pyramid patterns on wet-etched patterned sapphire substrate

Published:2014-03 Issue: Volume:118 Page:72-75
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Chen Yu-Chung,Lin Bo-Wen,Hsu Wen-Ching,Wu YewChung Sermon

Funder

Sino American Silicon Products Incorporation and the National Science Council of the Republic of China

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference7 articles.

1. Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching;Yu;J Alloys Compd,2007

2. Defect structure originating from threading dislocations within the GaN film grown on a convex patterned sapphire substrate;Oh;Thin Solid Films,2011

3. Fabrication of pyramidal patterned sapphire substrates for high-efficiency InGaN-based light emitting diodes;Wuu;J Electrochem Soc,2006

4. Analyses of light extraction efficiency in GaN-based LEDs grown on patterned sapphire substrates;Xu;Phys Status Solidi (c),2011

5. High brightness GaN-based light-emitting diodes;Lee;J Disp Technol,2007

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1. Facile extraction of scanning probe shape for improved deconvolution of tip-sample interaction artifacts;Micro and Nano Systems Letters;2024-08-24

2. Analysis of Wet-Etched Structures on R-Plane Substrates of Sapphire in the Etchant of Sulfuric Acid and Phosphoric Acid;ECS Journal of Solid State Science and Technology;2024-04-01

3. Anisotropic Analysis of Etch Rates for Sapphire Based on a Layer-by-Layer Removal Model of Surface Atoms;Processes;2023-04-21

4. Sapphire nanophotonics: Fabrication challenges and optical properties;Micro and Nano Engineering;2022-04

5. Analysis of Etch Profiles on C-Plane Wafers in Wet Etching of Sapphire Based on Undercutting Rate Distributions in Mixture of H₂SO₄ and H₃PO₄ at 236 °C;ECS Journal of Solid State Science and Technology;2022-03-01

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