Decohesion of Ti3SiC2 induced by He impurities
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference21 articles.
1. Dislocations, kink bands, and room-temperature plasticity of Ti3SiC2
2. Electronic structure and bonding properties in layered ternary carbide Ti3SiC2
3. Structural and electronic properties of M2InC (M = Ti, Zr, and Hf)
4. Electronic structures of and composition gaps among the ternary carbidesTi2MC
5. Ab initiogeometry optimization and ground state properties of layered ternary carbides Ti3MC2(M = Al, Si and Ge)
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1. Effect of oxygen on Te infiltration into superalloy Inconel 718 at elevated temperature;Surface and Coatings Technology;2021-06
2. In situ He+ irradiation of the double solid solution (Ti0.5,Zr0.5)2(Al0.5,Sn0.5)C MAX phase: Defect evolution in the 350–800 °C temperature range;Acta Materialia;2021-03
3. First-principles study of hydrogen incorporation into the Ti3SiC2/Zr heterojunction;Modern Physics Letters B;2019-12-03
4. Physical properties of Ti3SiC2/Zr heterojunction under hydrostatic pressure;IOP Conference Series: Materials Science and Engineering;2019-07-01
5. Microstructural evolution and growth kinetics of interfacial compounds in TiAl/Ti3SiC2 diffusion bonding joints;Materials Science and Engineering: A;2019-05
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