Ti/Ni/Au contacts to n-SiC after low energy implantation-Reference-Cited by-同舟云学术

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Ti/Ni/Au contacts to n-SiC after low energy implantation

Published:2016-03 Issue: Volume:166 Page:39-42
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Leech Patrick W,Holland Anthony S,Reeves Geoffrey K,Pan Yue,Ridgway Mark,Tanner Phillip

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. Materials selection and interfacial reaction in ohmic-contact formation on SiC;Lu,2004

2. Ohmic contact behavior of Co/C/4H-SiC structures;Yongshun;J. Semicond.,2011

3. Ti–Al based ohmic contacts to n-type 6H-SiC with P+ ion implantation;Hui;Chin. Phys.,2006

4. Low-energy ion bombardment to tailor the interfacial and mechanical properties ofpolycrystalline 3C-silicon carbide;Liu;JVSTA,2010

5. Cr ohmic contact on an Ar+ ion modified 6H-SiC (0001) surface;Grodzicki;Opt. Appl.,2009

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Corrigendum to “Ti/Ni/Au contacts to n-SiC after low energy implantation” [Mat. Lett. 166 (2016) 39–42];Materials Letters;2024-09

2. A critical review of theory and progress in Ohmic contacts to p-type SiC;Journal of Crystal Growth;2020-02

3. Low Energy Ion Implantation and Annealing of Au/Ni/Ti Contacts to n-SiC;MRS Advances;2017-04-24

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