Ti–Al based ohmic contacts to n-type 6H-SiC with P + ion implantation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1009-1963/15/9/039/pdf
Reference15 articles.
1. Carbon structural transitions and ohmic contacts on 4H-SiC
2. Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide
3. Study of Co- and Ni-based ohmic contacts to n-type 4H-SiC
4. Characterization of sputtered titanium silicide ohmic contacts on n-type 6H-silicon carbide
5. Nickel ohmic contacts to p- and n-type 4H-SiC
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1. Ohmic contacts to n-type 4H- and 6H-SiC;Journal of Physics: Conference Series;2018-12
2. Ti/Ni/Au contacts to n-SiC after low energy implantation;Materials Letters;2016-03
3. Effect of Low Energy Implantation on the Properties of Ti/Ni/Au Contacts to n-SiC;MRS Proceedings;2015
4. Effect of additional silicon on titanium/4H-SiC contacts properties;Chinese Physics B;2014-05
5. Optimized analysis and experimental study for two-layer contact of crystalline silicon solar cells;Acta Physica Sinica;2012
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