Influence of nitrogen annealing on electrical properties of lead zirconate titanate thin film deposited on titanium metal foil
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference26 articles.
1. An experimental 512-bit nonvolatile memory with ferroelectric storage cell
2. Improvement in the pyroelectric infrared radiation detector
3. Integrated PLZT thin film waveguide modulators
4. Ultrasonic thin‐walled tube wave devices for sensor applications
5. Thickness dependent properties of acetate-derived PLZT films
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1. Sm-doping induced large enhancement of antiferroelectric and energy storage performances of (111) oriented PbZrO3 thin films;Ceramics International;2019-12
2. Effect of annealing atmosphere pO2 on leakage current in 80(Bi0.5Na0.5)TiO3-20(Bi0.5K0.5)TiO3 piezoelectric thin films;Applied Physics Letters;2017-04-17
3. Tailoring the dielectric properties of pyrochlore free lead zirconium titanate by synthesising it through different synthesis routes;The Journal of Engineering;2014-05
4. Electrical characterization of the metal ferroelectric oxide semiconductor and metal ferroelectric nitride semiconductor gate stacks for ferroelectric field effect transistors;Applied Physics Letters;2014-03-03
5. Influence of processing conditions on the structure, composition and ferroelectric properties of sputtered PZT thin films on Ti-substrates;Applied Surface Science;2014-01
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