Demonstration of high on/off ratio and linearity of SnO2-quantum-dot-based synaptic device
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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1. Resistance random access memory
2. Memristor modeling: challenges in theories, simulations, and device variability
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3. Simulation Study of Interfacial Switching Memristor Structure and Neural Network Performance;Korean Journal of Metals and Materials;2024-03-05
4. Effects of thermal annealing on analog resistive switching behavior in bilayer HfO2/ZnO synaptic devices: the role of ZnO grain boundaries;Nanoscale;2024
5. Investigation of resistive switching dynamics in e-beam evaporated P-type tin-oxide based cross-cell memristor for synaptic and memory application;Materials Letters;2023-12
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