Gradual resistive switching and synaptic properties of ITO/HfAlO/ITO device embedded with Pt nanoparticles-Reference-Cited by-同舟云学术

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Gradual resistive switching and synaptic properties of ITO/HfAlO/ITO device embedded with Pt nanoparticles

Published:2021-05 Issue: Volume: Page:130011
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Algadi Hassan,Mahata Chandreswar,Alsuwian Turki,Ismail Muhammad,Kwon Daewoong,Kim Sungjun

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. Room-temperature developed flexible biomemristor with ultralow switching voltage for array learning

2. Embedded nanoparticle dynamics and their influence on switching behaviour of resistive memory devices

3. Highly improved performance in Zr0.5Hf0.5O2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory

4. Resistive switching characteristics of a Pt nanoparticle-embedded SiO2-based memory

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1. Atomic Layer Deposition Films for Resistive Random‐Access Memories;Advanced Materials Technologies;2024-04-12

2. Memristor Based on a Lotus Root/Lactalbumin Bilayer as a Biocompatible Artificial Synapse for Neuromorphic Electronics;ACS Sustainable Chemistry & Engineering;2023-10-19

3. HfAlO-based ferroelectric memristors for artificial synaptic plasticity;Frontiers of Physics;2023-09-20

4. Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing;Nano Convergence;2023-09-14

5. Investigation of analog resistive switching dynamics in microwave-assisted Fe3O4 based memristor for neuromorphic application;Materials Letters;2023-08

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