High quality GaN grown on polycrystalline diamond substrates with h-BN insertion layers by MOCVD-Reference-Cited by-同舟云学术

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High quality GaN grown on polycrystalline diamond substrates with h-BN insertion layers by MOCVD

Published:2021-12 Issue: Volume:305 Page:130806
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Xu Wenqiang,Xu Shengrui,Tao Hongchang,Gao Yuan,Fan Xiaomeng,Du Jinjuan,Ai Lixia,Peng Liping,Zhang Jinfeng,Zhang Jincheng,Hao Yue

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Thermal Conductivity of Diamond;Graebner,1995

2. Diamond Thin Films: a;Kornyushchenko,2006

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The enhanced GaN deposition on highly N-incorporated diamond substrate;Materials Letters;2024-09

2. Prestressing method to inhibit crack initiation and expansion in a large-sized diamond film during polishing;Diamond and Related Materials;2024-04

3. The solution of wetting issues in GaN epitaxy on (111) SCD with magnetron sputtered AlN;Journal of Alloys and Compounds;2024-01

4. Evolutionary growth strategy of GaN on (1 1 1) diamond modulated by nano-patterned buffer engineering;Materials & Design;2023-11

5. Process parameters simulation and analysis of a new reactor for high temperature MOCVD AlGaN growth;2023-10-25

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