The correlation of resistivity with the crystal size present in silicon nanowires through confinement based models-Reference-Cited by-同舟云学术

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The correlation of resistivity with the crystal size present in silicon nanowires through confinement based models

Published:2021-10 Issue: Volume:301 Page:130312
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Kashyap Vikas,Kumar Chandra,Chaudhary Neeru,Goyal Navdeep,Saxena Kapil

Funder

Smoking Research Foundation

University Grants Commission

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Photoluminescence properties of silicon nanocrystals as a function of their size

2. Porous Silicon One-Dimensional Photonic Crystals for Optical Signal Modulation

3. Size‐dependent photoluminescence in silicon nanostructures: quantum confinement effect

4. Roughness of silicon nanowire sidewalls and room temperature photoluminescence

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