Effect of NH3 flow on electrical and mechanical properties of ALD TiN thin films

Author:

Cho Hyunchol,Nie Ben,Dhamdhere Ajit,Meng Yifei,Neuburger Monica,Ahn Ji-Hoon,Jung Sung-Hoon,Kim Hae-Young

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Understanding the role of TiN barrier layer on electrical performance of MOS device with ALD-TiN/ALD-TiAlC metal gate stacks, ECS;Xiang;J. Sol. Sta. Sci. and Tech.,2016

2. Low temperature plasma-enhanced ALD TiN ultrathin films for Hf0.5Zr0.5O2-based ferroelectric MIM structures;Kozodaev;Phys. Stat. Sol. A,2017

3. Effects of TiN deposition on the characteristics of W/TiN/SiO2/Si metal oxide semiconductor capacitors;Park;J. Elect. Soc.,2001

4. Improvement of the properties and electrical performance on TiCl4-based TiN film using sequential flow chemical vapor deposition process;Cheng;Thin Solid Films,2010

5. Thermal stability of TiN metal gate prepared by atomic layer deposition or physical vapor deposition on high-K dielectric;Wu;Appl. Phys. Lett.,2010

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