Author:
Cho Hyunchol,Nie Ben,Dhamdhere Ajit,Meng Yifei,Neuburger Monica,Ahn Ji-Hoon,Jung Sung-Hoon,Kim Hae-Young
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference17 articles.
1. Understanding the role of TiN barrier layer on electrical performance of MOS device with ALD-TiN/ALD-TiAlC metal gate stacks, ECS;Xiang;J. Sol. Sta. Sci. and Tech.,2016
2. Low temperature plasma-enhanced ALD TiN ultrathin films for Hf0.5Zr0.5O2-based ferroelectric MIM structures;Kozodaev;Phys. Stat. Sol. A,2017
3. Effects of TiN deposition on the characteristics of W/TiN/SiO2/Si metal oxide semiconductor capacitors;Park;J. Elect. Soc.,2001
4. Improvement of the properties and electrical performance on TiCl4-based TiN film using sequential flow chemical vapor deposition process;Cheng;Thin Solid Films,2010
5. Thermal stability of TiN metal gate prepared by atomic layer deposition or physical vapor deposition on high-K dielectric;Wu;Appl. Phys. Lett.,2010
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献