Improvement of the properties and electrical performance on TiCl4-based TiN film using sequential flow chemical vapor deposition process-Reference-Cited by-同舟云学术

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Improvement of the properties and electrical performance on TiCl4-based TiN film using sequential flow chemical vapor deposition process

Published:2010-02 Issue:8 Volume:518 Page:2285-2289
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Cheng Ming-Da,Luoh Tuung,Su Chin-Ta,Yang Ta-Hung,Chen Kuang-Chao,Lu Chih-Yuan

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Thermal stability of Al/barrier/TiSix multilayer structures

2. Optimum substrate bias condition for TiN thin film deposition using an ECR sputter system

3. Comparison study of physical vapor-deposited and chemical vapor-deposited titanium nitride thin films using X-ray photoelectron spectroscopy

4. Low-temperature deposition of films from tetrakis(dimethylamido)titanium and ammonia

5. Impact of plasma treatment time on MOCVD-TiN properties and on the electrical performance of deep contacts

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1. Development of hydrogen-selective TiOxNy-Pd composite membrane materials by atomic layer deposition;Applied Materials Today;2024-08

2. Conductive TiN thin films grown by plasma-enhanced atomic layer deposition: Effects of N-sources and thermal treatments;Journal of Vacuum Science & Technology A;2023-03-06

3. Enhanced sensitivity towards hydrogen by a TiN interlayer in Pd-decorated SnO₂ nanowires;Journal of Materials Chemistry A;2023

4. Effect of NH3 flow on electrical and mechanical properties of ALD TiN thin films;Materials Letters;2021-05

5. TiCl4 Barrier Process Engineering in Semiconductor Manufacturing;Coatings;2016-01-12

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