Structural properties of porous In0.08Ga0.92N synthesized using photoelectrochemical etching
Author:
Funder
Research University (RU)
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference22 articles.
1. Characteristics of low-temperature-grown GaN films on Si(111)
2. Structural and optical characteristics of porous GaN generated by electroless chemical etching
3. High-Efficiency InGaN Light-Emitting Diodes Via Sidewall Selective Etching and Oxidation
4. Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaN
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3. Influence of etching time on the porous p-type gallium nitride using alternating current photo-assisted electrochemical etching technique;International Journal of Nanotechnology;2022
4. Comparative Studies between Porous Silicon and Porous P-Type Gallium Nitride Prepared Using Alternating Current Photo-Assisted Electrochemical Etching Technique;Journal of Physics: Conference Series;2020-05-01
5. Alteration of structural and optical properties in quaternary Al0.1In0.1Ga0.8N films using ultraviolet assisted photo-electrochemical etching route;Journal of Alloys and Compounds;2015-11
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