Formation and photoluminescence properties of amorphous silicon oxide nanowires-Reference-Cited by-同舟云学术

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Formation and photoluminescence properties of amorphous silicon oxide nanowires

Published:2011-10 Issue:19-20 Volume:65 Page:2979-2981
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Jang Seonhee,Lee Youngil,Kim Sungeun,Seo Jungwook,Kim Donghoon

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires

2. General Synthesis of Compound Semiconductor Nanowires

3. Self-Oriented Regular Arrays of Carbon Nanotubes and Their Field Emission Properties

4. Synthesis of Gallium Nitride Nanorods Through a Carbon Nanotube-Confined Reaction

5. Self‐limiting oxidation for fabricating sub‐5 nm silicon nanowires

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An investigation on physical properties of SiOx nanowires deposited by chemical vapor deposition method: The effect of substrate to boat distance;Modern Physics Letters B;2017-09-06

2. A new approach of the synthesis of SiO2 nanowires by using bulk copper foils as catalyst;Applied Surface Science;2016-11

3. Solid source growth of Si oxide nanowires promoted by carbon nanotubes;Applied Surface Science;2014-09

4. Ultraviolet emission of amorphous SiO2+x nanowires with connected bead-chain morphology;RSC Adv.;2014

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