Investigation of an upflow cold-wall CVD reactor by gas phase Raman spectroscopy-Reference-Cited by-同舟云学术

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Investigation of an upflow cold-wall CVD reactor by gas phase Raman spectroscopy

Published:2002-04 Issue:1 Volume:409 Page:88-97
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Park Chinho,Yeon Hwang Jang,Huang Min,Anderson Timothy J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference36 articles.

1. GaInAsP Alloy Semiconductors, Ch. 3;Hirtz,1982

2. Organometallic Vapor Phase Epitaxy: Theory and Practice;Stringfellow,1989

3. Transport phenomena and chemical reaction issues in OMVPE of compound semiconductors

4. Gas Flow Patterns in Horizontal Epitaxial Reactor Cells Observed by Interference Holography

5. Transport phenomena in vertical reactors for metalorganic vapor phase epitaxy

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1. Modeling and designing a new gas injection diffusion system for metalorganic chemical vapor deposition;Heat and Mass Transfer;2017-07-21

2. Flow field characterization in a vertically oriented cold wall CCVD reactor by particle image velocimetry;Chemical Engineering Journal;2012-03

3. Investigation of the Thermal Decomposition of Triethylgallium Using in situ Raman Spectroscopy and DFT Calculations;ECS Transactions;2009-09-25

4. Homogeneous Decomposition of Trimethylindium in an Inverted, Stagnation-Point Flow Reactor by In Situ Raman Spectroscopy;Journal of The Electrochemical Society;2008

5. Investigation of mass transport phenomena in an upflow cold-wall CVD reactor by gas phase Raman spectroscopy and modeling;Journal of Crystal Growth;2005-06

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