Explanation of the initial phase change vs. incident angle of the RHEED intensity oscillation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Phase of reflection high-energy electron-diffraction intensity oscillations during molecular-beam-epitaxy growth of GaAs(100)
2. Developments in the use of RHEED for interpreting growth processes in the MBE of wide gap II–VI semiconductors
3. Reflection High-Energy Electron Diffraction and Reflection Imaging of Surfaces;Joyce,1987
4. MBE Growth of Strained InxGa1−xAs on GaAs(001)
5. Theory of rheed for general surfaces
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1. Review: Geometric interpretation of reflection and transmission RHEED patterns;Micron;2022-08
2. Bi as an antisurfactant in heteroepitaxial growth of Co/Au(111) multilayers;Solid State Communications;2021-03
3. Molecular beam epitaxy growth of multilayer FeSe thin film on SrTiO3 (001);Acta Physica Sinica;2016
4. In situ RHEED study of epitaxial gold nanocrystals on TiO2 (110) surfaces;Applied Surface Science;2013-04
5. Modeling RHEED intensity oscillations in multilayer epitaxy: Determination of the Ehrlich-Schwoebel barrier in Ge(001) homoepitaxy;Physical Review B;2007-10-08
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