Growth of single-crystal Si, Ge and SiGe layers using plasma-assisted CVD-Reference-Cited by-同舟云学术

Growth of single-crystal Si, Ge and SiGe layers using plasma-assisted CVD

Published:1997-02 Issue:1-2 Volume:294 Page:76-79
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Thwaites M.J.,Reehal H.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference23 articles.

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5. R.A. Outlaw, P. Hopson Jr., G.H. Walker, R.K. Crouch and W.A. Jesser, J. Vac. Sci. Technol., A3 (1985) 692.

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