Electron microscopy study of SiC obtained by the carbonization of Si(111)-Reference-Cited by-同舟云学术

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Electron microscopy study of SiC obtained by the carbonization of Si(111)

Published:1999-04 Issue: Volume:343-344 Page:305-308
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Pacheco F.J.,Sanchez A.M.,Molina S.I.,Araújo D.,Devrajan J.,Steckl A.J.,García R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Epitaxial growth of beta -SiC on Si by RTCVD with C/sub 3/H/sub 8/ and SiH/sub 4/

2. Transmission electron microscopy study of Si δ-doped GaAs/AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures

3. Mosaic structure in epitaxial thin films having large lattice mismatch

4. Structural characterization of nanometer SiC films grown on Si

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron tomography analysis of 3D interfacial nanostructures appearing in annealed Si rich SiC films;Nanoscale;2017

2. The interaction of carbon with Si(111):As and Si(111):H surfaces, a theoretical study;Surface Science;2009-02

3. Chemical and structural transformations of silicon submitted to H2 or H2/CH4 microwave plasmas;Diamond and Related Materials;2008-04

4. XPS and STM study of SiC synthesized by acetylene and disilane reaction with the Si(100)2×1 surface;Surface Science;2005-05

5. Planar Defects, Voids and their Relationship in 3C-SiC Layers;Materials Science Forum;2005-05

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