Author:
Nukeaw Jiti,Asaoka Rikiya,Fujiwara Yasufumi,Takeda Yoshikazu
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Electron mobility and energy gap of In0.53Ga0.47As on InP substrate
2. Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON <111>B InP
3. A. Sasaki, Y. Takeda, N. Shikagawa, T. Takagi, Jpn. J. Appl. Phys. Supplement 16-1 (1977) 239.
4. H. Ohno, J. Barnard, in: T.P. Pearsall (Ed.), GaInAsP Alloy Semiconductors, Wiley, New York, 1982, p. 437.
5. Ga0.47In0.53As/InP multiquantum well heterostructure lasers grown by molecular beam epitaxy operating at 1.53 μm
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献