High growth rate deposition of oriented hexagonal InN films-Reference-Cited by-同舟云学术

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High growth rate deposition of oriented hexagonal InN films

Published:2002-02 Issue:1-2 Volume:405 Page:194-197
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Yang Fuh-Hsiang,Jih-Shang ,Hwang ,Chen Kuei-Hsien,Yang Ying-Jay,Lee Tzung-Han,Hwa Luu-Gen,Chen Li-Chyong

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Optical band gap of indium nitride

2. The spectral p-n junction model for tandem solar-cell design

3. Epitaxial growth of indium nitride

4. Epitaxial Growth of InN by Plasma-Assisted Metalorganic Chemical Vapor Deposition

5. Low-Temperature Growth of InN Films on (111)GaAs Substrates

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1. Preparation of flat cross section of thin films by perforation fracture method;Journal of the Ceramic Society of Japan;2020-10-01

2. High-electron-mobility InN epilayers grown on silicon substrate;Applied Physics Letters;2018-04-16

3. Evaluation of the impact of TMIn flow rate on the structural and optical properties of InN/ZnO heterojunctions using RF-MOMBE;Journal of Crystal Growth;2017-10

4. Growth of InN films by radical-enhanced metal organic chemical vapor deposition at a low temperature of 200 °C;Japanese Journal of Applied Physics;2017-05-26

5. GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER;Surface Review and Letters;2013-04

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