On the validity of defect density determinations by the recombination-regime modulated photoconductivity technique-Reference-Cited by-同舟云学术

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On the validity of defect density determinations by the recombination-regime modulated photoconductivity technique

Published:2004-02 Issue:1-2 Volume:449 Page:180-186
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Dussan A.,Schmidt J.A.,Arce R.D.,Buitrago R.H.,Koropecki R.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Modulated and transient photoconductivity in a-As2 Se3

2. Changes in the trapping and recombination process of hydrogenated amorphous silicon in the Staebler–Wronski effect

3. Photostructural changes in amorphous semiconductors studied by the modulated photocurrent method

4. An experimental evaluation of transient and modulated photocurrent density-of-states spectroscopies

5. Density of states in the channel material of low temperature polycrystalline silicon thin film transistors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Density of States in Thin Boron-Doped Microcrystalline Silicon Films Estimated from the Thermally Stimulated Conductivity Method;Acta Physica Polonica A;2014-01

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