Raman studies of aluminum induced microcrystallization of n+ Si:H films produced by PECVD-Reference-Cited by-同舟云学术

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Raman studies of aluminum induced microcrystallization of n+ Si:H films produced by PECVD

Published:2003-11 Issue:1 Volume:445 Page:32-37
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Rojas-López M.,Gayou V.L.,Pérez-Blanco R.E.,Torres-Jácome A.,Navarro-Contreras H.,Vidal M.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Fabrication and performance of thin film transistors, TFTs, incorporating doped μc-Si source and drain contacts, and boron-compensated μc-Si channel layers

2. Preparation of High-Quality poly-Si and μc-Si Films by the SPC Method

3. Undoped and Phosphorus Doped a-Sic:H Films: Investigation of Electrical Properties and Hall Effect

4. Microcrystalline Si: H Film and Its Application to Solar Cells

5. Improved Electrical and Transport Characteristics of Amorphous Silicon by Enriching with Microcrystalline Silicon

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of thin polycrystalline silicon films deposited on glass by CVD;Semiconductor Science and Technology;2012-11-07

2. a-Si:H crystallization from isothermal annealing and its dependence on the substrate used;Materials Science and Engineering: B;2010-10

3. Embedded NVM Devices with Solid-Phase Crystallized Poly-Si Film on a Glass Substrate for System-on-Panel Applications;Journal of The Electrochemical Society;2009

4. AFM and FTIR characterization of microcrystalline Si obtained from isothermal annealing of Al/a-Si:H;physica status solidi (a);2007-04

5. Morphological transformation and kinetic analysis in the aluminum-mediated a-Si:H crystallization;Journal of Non-Crystalline Solids;2006-03

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