a-Si:H crystallization from isothermal annealing and its dependence on the substrate used-Reference-Cited by-同舟云学术

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a-Si:H crystallization from isothermal annealing and its dependence on the substrate used

Published:2010-10 Issue:1-3 Volume:174 Page:137-140
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Rojas-López M.,Orduña-Díaz A.,Delgado-Macuil R.,Gayou V.L.,Bibbins-Martínez M.,Torres-Jácome A.,Treviño-Palacios C.G.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

1. Fabrication and performance of thin film transistors, TFTs, incorporating doped μc-Si source and drain contacts, and boron-compensated μc-Si channel layers

2. Preparation of High-Quality poly-Si and μc-Si Films by the SPC Method

3. Nanocrystalline silicon from hot-wire deposition — a photovoltaic material?

4. Effect of the substrate on the structural properties of low temperature microcrystalline silicon films – a Raman spectroscopy and atomic force microscopy investigation

5. Crystallization of silicon in aluminium/amorphous-silicon multilayers

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multi-fidelity Gaussian process based empirical potential development for Si:H nanowires;Theoretical and Applied Mechanics Letters;2020-03

2. Low temperature plasma production of hydrogenated nanocrystalline silicon thin films;Current Applied Physics;2013-01

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