Dielectric films fabricated in plasma as passivation of 4H-SiC Schottky diodes-Reference-Cited by-同舟云学术

Dielectric films fabricated in plasma as passivation of 4H-SiC Schottky diodes

Published:2004-01 Issue:1 Volume:446 Page:106-110
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Sochacki Mariusz,Szmidt Jan

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Insulator investigation on SiC for improved reliability

2. Formation of nitride layers on 6H-SiC surfaces

3. Progress in SiC: from material growth to commercial device development

4. G.M. Dolny, D.T. Morisette, P.M. Shenoy, M. Zafrani, J. Gladish, J.M. Woodall, J.A. Cooper, M.R. Melloch, Proceedings of the 56th Annual IEEE Device Research Conference, Charlottesville, VA, June 22–24, 1998, p. 84

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