Dependence of TFT performance on the dielectric characteristics-Reference-Cited by-同舟云学术

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Dependence of TFT performance on the dielectric characteristics

Published:2003-03 Issue:1-2 Volume:427 Page:71-76
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Lavareda G.,Nunes de Carvalho C.,Amaral A.,Fortunato E.,Ramos A.R.,da Silva M.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Integrated conventional and laser re-crystallised amorphous silicon thin film transistors for large area imaging and display applications

2. Properties of hydrogenated amorphous silicon thin film transistors fabricated at 150°C

3. Coplanar amorphous silicon thin film transistor fabricated by inductively-coupled plasma CVD

4. Electronic properties of bottom gate silicon nitride/hydrogenated amorphous silicon structures

5. Stability of electrical properties of nitrogen‐rich, silicon‐rich, and stoichiometric silicon nitride films

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma;ACS Applied Materials & Interfaces;2015-05-12

2. Effect of electrical and mechanical stresses of low temperature a-Si:H thin film transistors fabricated on polyimide and glass substrates;Thin Solid Films;2013-02

3. Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study;Physical Review B;2012-05-22

4. Optimization of n+ nc-Si:H and a-SiNx:H layers for their application in nc-Si:H TFT;Vacuum;2011-02

5. Interface dependent electrical properties of amorphous InGaZnO[sub 4] thin film transistors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

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