Bias controlled spectral sensitivity in a-SiC:H p–i–n devices-Reference-Cited by-同舟云学术

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Bias controlled spectral sensitivity in a-SiC:H p–i–n devices

Published:2003-03 Issue:1-2 Volume:427 Page:196-200
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Louro P.,Vieira M.,Fantoni A.,Fernandes M.,Vygranenko Yu.,Schwarz R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Colour separation in a-Si:H based p-i-i-n sensors: temperature and intensity dependence

2. Laser-scanned p-i-n photodiode (LSP) for image detection

3. Improved Resolution in A P-I-N Image Sensor by Changing the Structure of the Doped Layers

4. ITO/SiOx/Si optical sensor with internal gain

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. a-Si:H p–i–n structures with extreme i-layer thickness;Thin Solid Films;2009-10

2. Optoelectronic Switches Based on Wide Band Gap Semiconductors;The Journal of Physical Chemistry B;2006-06-15

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