Colour separation in a-Si:H based p-i-i-n sensors: temperature and intensity dependence-Reference-Cited by-同舟云学术

Colour separation in a-Si:H based p-i-i-n sensors: temperature and intensity dependence

Published:1998-05 Issue: Volume:227-230 Page:1335-1339
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Neidlinger T,Brüggemann R,Brummack H,Schubert M.B

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Three-color sensor based on amorphous n-i-p-i-n layer sequence

2. H. Fischer, J. Schulte, P. Rieve, M. Böhm, in: E.A. Schiff, M. Hack, A. Madan, M. Powell, A. Matsuda (Eds.), Amorphous Silicon Technology—1994, Materials Research Society, Pittsburgh, 1994, pp. 867–872.

3. T. Neidlinger, M.B. Schubert, G. Schmid, H. Brummack, in: M. Hack, E.A. Schiff, S. Wagner, R. Schropp, A. Matsuda (Eds.), Amorphous Silicon Technology—1996, Materials Research Society, Pittsburgh, 1996, pp. 147–152.

4. The operational principle of a new amorphous silicon based p-i-i-n color detector

5. Defect distribution in a-Si:H-pin solar cells before and after degradation

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