The effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector-Reference-Cited by-同舟云学术

The effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector

Published:2000-10 Issue:1 Volume:374 Page:80-84
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Horng Gwo-Ji,Chang Chun-Yen,Ho Chia,Lee Ching-Yuan,Huang T.Y

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference9 articles.

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2. T.S. Villani, W.F. Kosonocky, in: E.L. Dereniak, R.E. Sampson (Eds.), Infrared Detectors and Focal Plane Arrays, Orlando, USA, March 30–31, 1989, SPIE proceedings 1107 (1989) 9.

3. D.L. Clark, J.R. Berry, in: B.F. Andresen, M. Scholl, I.J. Spiro (Eds.), Infrared Technology XVII, San Diego, USA, July 22–26, 1991, SPIE Proceedings, 1540 (1991) 303.

4. N. Yutani, H. Yagi, M. Kimata, J. Nakanishi, S. Nagayoshi, N. Tsubouchi, in: E. Fossum, J. Bosiers (Eds.), Detectors, Sensors and Displays — Charge Coupled Devices and MSM Photodetector, Washington DC, USA, December 8–11, 1991, International Electron Devices Meeting, 1991, p. 175.

5. Epitaxial orientation of PtSi grown by Pt deposition on heated Si(001) substrate

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