Qualitative study of beta silicon carbide residual stress by Raman spectroscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. Introduction to Solid State Physics;Kittel,1971
2. Effect of static uniaxial stress on the Raman spectrum of silicon
3. Inelastic light scattering in the presence of uniaxial stresses
4. Raman scattering and phonon dispersion in Si and GaP at very high pressure
5. Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors
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