The contribution of H + ion etching during the initial deposition stage to the orientation grade of diamond films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference17 articles.
1. The Physics and Chemistry of Carbides, Nitrides, and Borides;Anthony,1990
2. Diamond Growth at Low Pressures
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1. Hydrogen plasma etching of silicon dioxide in a hollow cathode system;Thin Solid Films;2010-04
2. Growth of (100) oriented diamond grains by the application of lateral temperature gradients across silicon substrates;Journal of Materials Research;2004-11-01
3. Synthesis of diamond films at low temperature and study of nonlinear dynamic synthesis process;SPIE Proceedings;2002-09-18
4. Enhancement of (100) texture in diamond films grown using a temperature gradient;Diamond and Related Materials;2002-07
5. Role of cyclic process in the initial stage of diamond deposition during bias enhanced nucleation;Journal of Applied Physics;2002
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