Graphene film transistors based on asymmetric gate design combining with chemical doping-Reference-Cited by-同舟云学术

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Graphene film transistors based on asymmetric gate design combining with chemical doping

Published:2022-04 Issue: Volume:278 Page:115628
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Sun Yanmei,He Nian,Wen Dianzhong

Funder

National Natural Science Foundation of China

Natural Science Foundation of Heilongjiang Province

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference36 articles.

1. The role of magnetite/graphene oxide nano-composite as a highefficiency adsorbent for removal of phenazopyridine residues from water samples, an experimental/theoretical investigation;Karimi-Maleh;J. Mol. Liq.,2020

2. Polysulfone nanofiltration membranes enriched with functionalized graphene oxide for dye removal from wastewater;Abdelhamid;J. Polym. Eng.,2020

3. Outstanding Graphene Quantum Dots from Carbon Source for Biomedical and Corrosion Inhibition Applications: A Review;Al Jahdaly;Sustainability,2021

4. Hysteresis of electronic transport in graphene transistors;Wang;ACS Nano,2010

5. Simultaneous determination of cholesterol, ascorbic acid and uric acid as three essential biological compounds at a carbon paste electrode modified with copper oxide decorated reduced graphene oxide nanocomposite and ionic liquid;Karimi-Maleh;J. Colloid Interface Sci.,2020

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