Analysis of current–voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range-Reference-Cited by-同舟云学术

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Analysis of current–voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range

Published:2010-07 Issue:1-3 Volume:171 Page:1-4
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Mtangi W.,van Rensburg P.J. Janse,Diale M.,Auret F.D.,Nyamhere C.,Nel J.M.,Chawanda A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Temperature variation of current–voltage characteristics of Au/Ni/n-GaN Schottky diodes

2. Schottky contact and the thermal stability of Ni onn‐type GaN

3. ASDAM 2002 Smolenice Castle;Donoval,2002

4. High temperature characteristics of Pd Schottky contacts on n-type GaN

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1. Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy;physica status solidi (a);2023-05-10

2. Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes;Journal of Applied Physics;2023-01-05

3. Origin of Surface Barrier Temperature Dependence for the Polar GaN Surface;ACS Applied Electronic Materials;2022-10-04

4. Modeling of Schottky diode characteristic by machine learning techniques based on experimental data with wide temperature range;Superlattices and Microstructures;2021-12

5. Electrical characterization of GaN Schottky barrier diode at cryogenic temperatures;Applied Physics Letters;2020-02-10

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