Wavelength tunable InAs/InP(100) quantum dots in 1.55-μm telecom devices-Reference-Cited by-同舟云学术

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Wavelength tunable InAs/InP(100) quantum dots in 1.55-μm telecom devices

Published:2008-02 Issue:2-3 Volume:147 Page:124-130
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Anantathanasarn S.,Barbarin Y.,Cade N.I.,van Veldhoven P.J.,Bente E.A.J.M.,Oei Y.S.,Kamada H.,Smit M.K.,Nötzel R.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Gain and the threshold of three-dimensional quantum-box lasers

2. High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates

3. Quantum computation with quantum dots

4. A Quantum Dot Single-Photon Turnstile Device

5. Effects of As/P exchange reaction on the formation of InAs/InP quantum dots

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of InAs(Bi)/GaAs Quantum Dots under a Bismuth Surfactant at High and Low Temperature;Journal of Nanomaterials;2022-06-06

2. A detailed first principle study on the structural, elastic, and electronic properties of indium arsenide (InAs) under induced pressure;Canadian Journal of Physics;2016-03

3. Quantum-Dot Lasers: Physics and Applications;Reference Module in Materials Science and Materials Engineering;2016

4. Quantum-Dot Lasers: Physics and Applications;Comprehensive Semiconductor Science and Technology;2011

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